Fabrication method of semiconductor structure
US9397190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2014 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Sep 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method of a semiconductor structure includes the following steps. First of all, a gate structure is provided on a substrate, and a first material layer is formed on the substrate and the gate structure. Next, boron dopant is implanted to the substrate, at two sides of the gate structure, to form a first doped region, and P type conductive dopant is implanted to the substrate, at the two sides of the gate structure, to form a second doped region. As following, a second material layer is formed on the first material layer. Finally, the second material layer, the first material layer and the substrate at the two sides of the gate structure are etched sequentially, and a recess is formed in the substrate, at the two sides of the gate structure, wherein the recess is positioned within the first doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.