Methods of preventing plasma induced damage during substrate processing
US9399812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2011 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Oct 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.