Programmable impedance elements and devices that include such elements
US9401472B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Aug 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programmable impedance elements structures, devices and methods are disclosed. Methods can include: forming a first electrode layer within an electrode opening that extends through a cap layer; planarizing to expose a top of the cap layer; cleaning the exposed top surface of the cap layer to remove residual species from previous process steps. Additional methods can include forming at least a base ion conductor layer having an active metal formed therein that may ion conduct within the ion conductor layer; and forming an inhibitor material that mitigates agglomeration of the active metal within the base ion conductor layer as compared to the active metal alone. Programmable impedance elements and/or devices can have switching material and electrodes parallel to both bottoms and sides of a cell opening formed in a cell dielectric. Other embodiments can include an ion conductor layer having an alloy of an active metal, or two ion conductor layers in contact with an active electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.