Method for silver deposition for a non-volatile memory device
US9401475B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2014 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Nov 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A method of depositing a silver layer includes forming a plurality of openings in a dielectric layer to expose a top surface of a structure comprising a resistive memory layer on top of a p-doped silicon-containing layer on top of a conductive structure, depositing a first metal layer comprising a tungsten layer overlying the top surface of the structure, wherein a first metal material of the first metal layer contacts a resistive memory material of the resistive memory layer and exposing the first metal layer in a bath comprising a solution of silver species having an alkaline pH for a predetermined time to form a silver metal layer from the silver species from the solution overlying the resistive memory material, wherein the silver species is reduced by the first metal material, and wherein the first metal material is solubilized while forming the silver metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.