Development of high etch selective hardmask material by ion implantation into amorphous carbon films

US9412613B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Pramit Manna · Sunnyvale, US
• Abhijit Basu Mallick · Palo Alto, US
• Ludovic Godet · Sunnyvale, US
• Yongmei Chen · 丈亭镇, CN
• Jun Xue · San Jose, US
• Mukund Srinivasan · Fremont, US
• Ellie Yieh · San Jose, US
• Srinivas D. Nemani · Sunnyvale, US

Key dates

• Filing date: Dec 18, 2014
• Grant date: Aug 9, 2016
• Expiry date: Dec 18, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31155
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.