Semiconductor device
US9412825B2 · kind B2 · utility
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1References
11Claims
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Key dates
| Filing date | Aug 29, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.