Patent · US Active

Storage elements, structures and methods having edgeless features for programmable layer(s)

US9412945B1 · kind B1 · utility

0Cited by
12References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 14, 2013
Grant dateAug 9, 2016
Priority date
Expiry dateOct 20, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8833

Abstract

A storage element can include a bottom structure having at least one edge formed by a top surface and a side surface; a programmable layer, programmable between at least two different impedance states, and formed over the at least one edge and in contact with a portion of the bottom structure; an insulating layer that extends above the top surface of the bottom structure having an opening to the bottom structure formed therein, the opening having sloped sides; and at least one top layer formed within the opening and in contact with the programmable layer. Methods of making such a storage element are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.