Patent · US Active

Opto-electronic sensor

US9417186B2 · kind B2 · utility

9Cited by

2References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bernhard Jakoby · Linz, AT
Ventsislav Lachiev · Linz, AT
Thomas Grille · Villach, AT
Peter Irsigler · Ried im Innkreis, AT
Ursula Hedenig · Villach, AT
Sokratis Sgouridis · Annenheim, AT
Thomas Ostermann · Velden am Wörther See, AT

Key dates

Filing date	Aug 30, 2012
Grant date	Aug 16, 2016
Priority date	—
Expiry date	Dec 31, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG01N21/7746
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.