Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US9418860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.