Semiconductor device with recombination region

US9419080B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Peter Irsigler · Ried im Innkreis, AT
• Holger Huesken · Munich, DE
• Roman Baburske · Otterfing, DE

Key dates

• Filing date: Dec 11, 2013
• Grant date: Aug 16, 2016
• Expiry date: Feb 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A semiconductor device includes a pn junction between a drift zone and a charge-carrier transfer region in a semiconductor body. An access channel provides a permanent charge carrier path connecting the drift zone with a recombination region through a separation region between the drift zone and the recombination region. The access channel adjusts a plasma density in the drift zone and the recombination region.