Single-crystal 4H-SiC substrate
US9422640B2 · kind B2 · utility
1Cited by
1References
12Claims
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Key dates
| Filing date | Jan 8, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Aug 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a single-crystal 4H-SiC substrate includes: preparing a flat 4H-SiC bulk single-crystal substrate; and epitaxially growing a first single-crystal 4H-SiC layer having recesses on the 4H-SiC bulk single-crystal substrate, wherein the first single-crystal 4H-SiC layer has a thickness of X (μm), the recesses have a diameter Y (μm) no smaller than 0.2*X (μm) and no larger than 2*X (μm), and a depth of Z (nm) no smaller than (0.95*X (μm)+0.5 (nm)) and no larger than 10*X (μm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.