Method for producing a silicon-germanium film with variable germanium content
US9425051B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 6, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | May 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The substrate is provided with a first semiconducting area partially covered by a first masking pattern to define a protected surface and an open surface. A continuous layer of silicon-germanium is deposited in non-selective manner on the first semiconducting area and on the first gate pattern. The continuous silicon-germanium layer forms an interface with the first semiconducting area. A diffusion/condensation annealing is performed to make the germanium atoms diffuse from the silicon-germanium layer to the open surface of the first semiconducting area. The masking pattern is a gate stack of the transistor or is used to define the shape of the gate stack in an electrically insulating layer so as to form a self-aligned gate stack with the source and drain areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.