Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US9425078B2 · kind B2 · utility
434Cited by
1References
22Claims
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Key dates
| Filing date | Feb 25, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.