Cut first alternative for 2D self-aligned via
US9425097B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Apr 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of lithographically cutting a Mx line before the Mx line is lithographically defined by patterning and the resulting 2DSAV device are provided. Embodiments include forming an a-Si dummy metal layer over a SiO2 layer; forming a first softmask stack over the a-Si dummy metal layer; patterning a plurality of vias through the first softmask stack down to the SiO2 layer; removing the first soft mask stack; forming first and second etch stop layers over the a-Si dummy metal layer, the first etch stop layer formed in the plurality of vias; forming a-Si mandrels on the second etch stop layer; forming oxide spacers on opposite sides of each a-Si mandrel; removing the a-Si mandrels; forming a-Si dummy metal lines in the a-Si dummy metal layer below the oxide spacers; and forming a SiOC layer between the a-Si dummy metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.