Three-dimensional memory device having a heterostructure quantum well channel
US9425299B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jun 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
A cylindrical confinement electron gas confined within a two-dimensional cylindrical region can be formed in a vertical semiconductor channel extending through a plurality of electrically conductive layers comprising control gate electrodes. A memory film in a memory opening is interposed between the vertical semiconductor channel and the electrically conductive layers. The vertical semiconductor channel includes a wider band gap semiconductor material and a narrow band gap semiconductor material. The cylindrical confinement electron gas is formed at an interface between the wider band gap semiconductor material and the narrow band gap semiconductor material. As a two-dimensional electron gas, the cylindrical confinement electron gas can provide high charge carrier mobility for the vertical semiconductor channel, which can be advantageously employed to provide higher performance for a three-dimensional memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.