Post treatment methods for oxide layers on semiconductor devices
US9431237B2 · kind B2 · utility
0Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2010 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Dec 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for post treating an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, the oxide layer is formed by thermal oxidation or plasma oxidation and treated with a plasma comprising helium. The helium-containing plasma may also include hydrogen, neon, argon and combinations thereof. In one or more embodiments, a SiO2 oxide layer is formed on a silicon substrate and treated with a plasma to improve the interface between the silicon substrate and the SiO2 oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.