Method for ion implantation
US9431247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jun 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.