Method and structure to reduce FET threshold voltage shift due to oxygen diffusion
US9431289B2 · kind B2 · utility
0Cited by
9References
4Claims
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Key dates
| Filing date | Jun 17, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.