Method for forming merged contact for semiconductor device

US9431399B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Emre Alptekin · Fishkill, US
• Balasubramanian Pranatharthiharan · Watervliet, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Ravikumar Ramachandran · Beacon, US
• Mickey H. Yu · South Burlington, US

Key dates

• Filing date: Dec 15, 2015
• Grant date: Aug 30, 2016
• Expiry date: Dec 15, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0186

Abstract

A method for forming a semiconductor device comprises forming a first fin and a second fin on a semiconductor substrate, forming a sacrificial gate stack over a channel region of the first fin and the second fin, depositing a layer of spacer material over the first fin and the second fin, depositing a layer of dielectric material over the layer of spacer material, removing a portion of the dielectric material to form a first cavity that exposes a portion of the first fin, epitaxially growing a first semiconductor material on the exposed portion of the first fin to form a source/drain region on the first fin, depositing a protective layer on the source/drain region on the first fin, removing a portion of the dielectric material to form a second cavity that exposes a portion of the second fin, and epitaxially growing a source/drain region on the second fin.