Directly forming SiGe fins on oxide
US9431425B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor mandrel structures are formed extending upward from a remaining portion of a semiconductor substrate. A first oxide isolation structure is formed on exposed surfaces of the remaining portion of the semiconductor substrate and between each semiconductor mandrel structure. A silicon germanium alloy fin is formed on opposing sidewalls of each semiconductor mandrel structure that is present in a pFET device region of the semiconductor substrate and directly on a surface of each first oxide isolation structure. Each semiconductor mandrel structure is removed and a second oxide isolation structure is formed between each first oxide isolation structure and extending beneath a bottommost surface of each first oxide isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.