Patent · US Active

Method for testing semiconductor dies and a test apparatus

US9435849B2 · kind B2 · utility

0Cited by

0References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Erwin Thalmann · Birkenfeld, DE
Michael Leutschacher · Finkenstein, AT
Christian Musshoff · Villach, AT
Stefan Kramp · Villach, AT

Key dates

Filing date	Jun 30, 2014
Grant date	Sep 6, 2016
Priority date	—
Expiry date	Jun 30, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG01R31/2637
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies including a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.