Middle of-line architecture for dense library layout using M0 hand-shake
US9437588B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dense library architecture using an M0 hand-shake and the method of forming the layout are disclosed. Embodiments include forming first and second active areas on a substrate, at the top and bottom of a cell, separated from each other; forming first through third gate lines perpendicular to the active areas, where the first and third gate lines are dummy gates at the cell edges; forming trench silicide segments on each of the active areas, between the first, second, and third gate lines; forming first and second M1 metal lines between the first and second gate lines and the second and third gate lines, respectively; forming a M0 segment between the first and second active regions perpendicular to the M1 metal lines; forming a CB between the M0 segment and the second gate line; and forming a V0 from the first metal line to the M0 segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.