Methods and apparatuses having strings of memory cells including a metal source
US9437604B2 · kind B2 · utility
17Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2013 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Nov 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.