Minimizing shorting between FinFET epitaxial regions
US9443853B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Apr 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.