TiOx based selector element
US9443906B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jan 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/24
Abstract
Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.