EUV lithography system

US9448490B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Udo Dinger · Oberkochen, DE
• Lars Wischmeier · Aalen, DE
• Markus Hauf · Ulm, DE
• Stephan Kellner · Lauchheim, DE
• Igor Gurevich · Riegelsberg, DE
• Markus Deguenther · Aalen, DE

Key dates

• Filing date: Jun 5, 2013
• Grant date: Sep 20, 2016
• Expiry date: Sep 23, 2034

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/7085
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51. The EUV beam path comprises a mirror system 13, which has a base and a multiplicity of mirror elements 17 having concave mirror surfaces, the orientation of which relative to the base is respectively adjustable.The monitor beam path 51 comprises at least one monitor radiation source 53, a screen 71, the mirror system 13, which is arranged in the monitor beam path 51 between the monitor radiation source 53 and the screen 71, and a spatially resolving detector 77. In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.