Device and method for writing data to a resistive memory
US9449688B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Sep 8, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0066
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a resistive memory including resistive elements, the resistance of each resistive element being capable of alternating between a high value and a low value, the memory further including a device for switching the resistance of at least one selected resistive element between the high and low values. The device includes a first circuit capable of circulating a first current through a first reference resistive component (RLRS), a second circuit capable of circulating a second current proportional to the first current through the selected resistive element, a third circuit capable of detecting the switching of the resistance of the selected resistive element from the comparison of the voltage across the first reference resistive component with the voltage across the selected resistive element, and a fourth circuit capable of interrupting the second current on detection of the switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.