Ferroelectric FinFET

US9449972B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stefan Flachowsky · Dresden, DE
• Ralf Illgen · Dresden, DE
• Jan Hoentschel · Dresden, DE

Key dates

• Filing date: Mar 6, 2015
• Grant date: Sep 20, 2016
• Expiry date: Mar 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

The present disclosure provides, in a first aspect, a semiconductor device, including a semiconductor substrate and a gate structure formed over the semiconductor substrate, wherein the gate structure comprises a fin and a ferroelectric high-k material formed at least over sidewall surfaces of the fin. Herein, a first thickness defined by a thickness of the ferroelectric high-k material formed over sidewalls of the fin is substantially greater than a second thickness defined by a thickness of the ferroelectric high-k material formed over an upper surface of the fin.