Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
US9449987B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2016 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Jan 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a memory device is provided. The method includes forming a first alternating stack of insulator layers and spacer material layers over a semiconductor substrate, etching the first alternating stack to expose a single crystalline semiconductor material, forming a first epitaxial semiconductor pedestal on the single crystalline semiconductor material, such that the first epitaxial semiconductor pedestal is in epitaxial alignment with the single crystalline semiconductor material, forming an array of memory stack structures through the first alternating stack, and forming at least one semiconductor device over the first epitaxial semiconductor pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.