Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices
US9455143B2 · kind B2 · utility
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3References
22Claims
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Key dates
| Filing date | Jul 1, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Jul 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.