Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structure

US9455232B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Thomas Werner · Radebeul, DE
• Frank Feustel · Dresden, DE
• Oliver Aubel · Dresden, DE

Key dates

• Filing date: Oct 16, 2014
• Grant date: Sep 27, 2016
• Expiry date: Oct 16, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure includes a semiconductor substrate, one or more interconnect layers provided over the substrate and a circuit. The circuit includes a plurality of circuit elements formed at the substrate and a plurality of electrical connections provided in the one or more interconnect layers. A die seal is provided in the one or more interconnect layers. A die seal leakage detection material is arranged in the one or more interconnect layers between the die seal and the plurality of electrical connections. The die seal provides a protection of the die seal leakage detection material from moisture if the die seal is intact. The die seal leakage detection material is adapted for providing a detectable modification of the circuit after an exposure of the die seal leakage detection material to moisture.