Low-oxidation plasma-assisted process
US9464352B2 · kind B2 · utility
447Cited by
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14Claims
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Key dates
| Filing date | May 2, 2014 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | May 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and/or the first period of time is shorter than the second period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.