Methods of forming patterns for semiconductor device structures
US9465287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.