Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

US9466660B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Matthew N. Rocklein · Boise, US
• Kotha Sai Madhukar Reddy · Boise, US
• Vassil Antonov · Boise, US
• Vishwanath Bhat · Boise, US

Key dates

• Filing date: Oct 16, 2013
• Grant date: Oct 11, 2016
• Expiry date: Oct 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoaNb) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.