Copper or copper alloy target/copper alloy backing plate assembly
US9472383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2004 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Nov 26, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.