Method of making a resistive random access memory device
US9472757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/881
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.