Methods using mask structures for substantially defect-free epitaxial growth

US9476143B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Benjamin Vincent · San Francisco, US
• Voon-Yew Thean · Fishkill, US
• Liesbeth Witters · Linden, BE

Key dates

• Filing date: Feb 15, 2013
• Grant date: Oct 25, 2016
• Expiry date: Aug 7, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening.