Magnetic-domain-wall-displacement memory cell and initializing method therefor
US9478309B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 13, 2013 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a magnetization reversal region in which magnetization is reversible; and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The magnetic domain wall displacement memory cell is configured so that a first region in which magnetization reversal occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which no magnetization reversal occurs is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.