Semiconductor devices and methods of manufacturing the same
US9478551B2 · kind B2 · utility
4Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2013 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Jan 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
A semiconductor device includes a channel layer over an active region, first and second field regions adjacent the active region, and a gate structure over the channel layer and portions of the first and second field regions. The first and second field regions include grooves adjacent respective sidewalls of the channel layer, and bottom surfaces of the grooves are below a bottom surface of the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.