Smart reread in nonvolatile memory
US9484098B1 · kind B1 · utility
9Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Aug 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A population of memory cells are programmed and an indicator of a first number of the memory cells programmed to a first state is recorded. Subsequently, a first read operation is performed using a first set of read parameters to identify a second number of the memory cells that are read as being in the first state. The difference between the first number and the second number is determined and a second set of read parameters for a second read (reread) is selected accordingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.