Semiconductor die singulation method
US9484210B2 · kind B2 · utility
6Cited by
9References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Apr 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer using a fluid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.