Device resulting from printing minimum width semiconductor features at non-minimum pitch
US9484300B2 · kind B2 · utility
0Cited by
10References
7Claims
0Family size
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Key dates
| Filing date | Nov 30, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Nov 30, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.