Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

US9484400B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Willmeroth · Friedberg, DE
• Franz Hirler · Isen, DE
• Hans Weber · Villach, AT
• Markus Schmitt · Neubiberg, DE
• Thomas Wahls · Munich, DE
• Rolf Weis · Dresden, DE

Key dates

• Filing date: Oct 8, 2015
• Grant date: Nov 1, 2016
• Expiry date: Oct 8, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A super junction semiconductor device is formed by forming at least a portion of a drift layer on a doped layer of a first conductivity type, implanting first dopants of a first conductivity type and second dopants of a second conductivity type into the drift layer using one or more implant masks with openings to form stripe-shaped first implant regions of the first conductivity type and stripe-shaped second implant regions of the second conductivity type in alternating order, and performing a heat treatment for controlling a diffusion of dopants from the implant regions to form stripe-shaped first regions of the first conductivity type and stripe-shaped second regions of the second conductivity type.