Patent · US Active

Methods of forming a nanowire transistor device

US9484407B2 · kind B2 · utility

0Cited by

0References

19Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Tim Baldauf · Dresden, DE
Stefan Flachowsky · Dresden, DE

Key dates

Filing date	Aug 27, 2014
Grant date	Nov 1, 2016
Priority date	—
Expiry date	Aug 27, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/122
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device is provided including a semiconductor substrate and a nanowire formed over the semiconductor substrate and wherein the nanowire includes a first layer exhibiting tensile stress and a second layer exhibiting compressive stress.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.