Methods of programming memory devices
US9490025B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Apr 17, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of programming memory devices include biasing each data line of a plurality of data lines to a program inhibit voltage; discharging a first portion of data lines of the plurality of data lines, wherein the first portion of data lines of the plurality of data lines are coupled to memory cells selected for programming; and applying a plurality of programming pulses to the memory cells selected for programming while biasing a remaining portion of data lines of the plurality of data lines to the program inhibit voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.