Seed layer for multilayer magnetic materials
US9490054B2 · kind B2 · utility
50Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2012 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Oct 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof may be inserted between the seed layer and magnetic layer. The magnetic element has thermal stability to at least 400° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.