Methods of forming strained epitaxial semiconductor material(S) above a strain-relaxed buffer layer
US9490123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Oct 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, sequentially forming a first material layer, a first capping layer, a second material layer and a second capping layer above a substrate, wherein the first and second material layers are made of semiconductor material having a lattice constant that is different than the substrate, the first material layer is strained as deposited, and a thickness of the first material layer exceeds its critical thickness required to be stable and strained, performing an anneal process after which the strain in the first material layer is substantially relaxed through the formation of crystallographic defects that are substantially confined to the semiconducting substrate, the first material layer, the first capping layer and the second material layer, and forming additional epitaxial semiconductor material on an upper surface of the resulting structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.