Limiting adjustment of polishing rates during substrate polishing
US9490186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Nov 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between the adjustment times and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.