Selective sputtering for pattern transfer
US9493879B2 · kind B2 · utility
132Cited by
690References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2013 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of patterning conductive layer with a mask are described. The methods include low-ion-mass sputtering of the conductive layer by accelerating (e.g. helium or hydrogen containing ions) toward a substrate which includes the patterned mask and the underlying conductive layer. The sputtering processes described herein selectively remove conductive layers while retaining mask material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.