Nucleation of III-N on REO templates
US9496132B2 · kind B2 · utility
1Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2013 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Sep 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.